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"Техника доступа к зашифрованным на Android-телефоне данным м..." Отправлено seeya, 17-Фев-13 22:45
http://ru.wikipedia.org/wiki/%D0%9E%D1%8... и тут про того же гутмана Anderson's main focus is on “burn-in" effects that occur when data is stored in RAM for an extended period. Gutmann [22, 23] also examines “burn-in,” which he attributes to physical changes that occur in semiconductor memories when the same value is stored in a cell for a long time. Accordingly, Gutmann suggests that keys should not be stored in one memory location for longer than several minutes. Our findings concern a different phenomenon: the remanence effects we have studied occur in modern DRAMs even when data is stored only momentarily. These effects do not result from the kind of physical changes that Gutmann described, but rather from the capacitance of DRAM cells. http://static.usenix.org/event/sec08/tech/full_papers/halder.../

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Сообщение*:	> http://ru.wikipedia.org/wiki/%D0%9E%D1%81%D1%82%D0%B0%D1%82%D0%BE%D1%87%D0%BD%D0%B0%D1%8F_%D0%B8%D0%BD%D1%84%D0%BE%D1%80%D0%BC%D0%B0%D1%86%D0%B8%D1%8F > и тут про того же гутмана > Anderson's main focus is on “burn-in" effects that occur when data is > stored in RAM for an extended period. Gutmann [22, 23] also > examines “burn-in,” which he attributes to physical changes that occur in > semiconductor memories when the same value is stored in a cell > for a long time. Accordingly, Gutmann suggests that keys should not > be stored in one memory location for longer than several minutes. > Our findings concern a different phenomenon: the remanence effects we have > studied occur in modern DRAMs even when data is stored only > momentarily. These effects do not result from the kind of physical > changes that Gutmann described, but rather from the capacitance of DRAM > cells. > http://static.usenix.org/event/sec08/tech/full_papers/halderman/halderman_html/
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